On increasing the temperature the specific resistance of a semiconductor

Platinum and silicon are cooled after heating up to 25° C then

Electric conduction in a semiconductor takes placedue to

The atomic bonding is same for which of the following paris

9.When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor

     When we convert pure semiconductor into N type the number of hole :–

A semiconductor is damaged by a strong current, because :

If ne and nh are the number of electrons and holesin a semiconductor heavily doped with phosphorus,then :–

When the conductivity of a semiconductor is onlydue to breaking of covalent bonds, the semiconductor is called :–

In an intrinsic semiconductor, number of electrons and holes at room temperature are :–

A semiconductor wire is connected in an electric circuit in series and temperature of semiconductor increased then the current in the circuit :–

In germanium crystal, the forbidden energy gap in joule is :–

In semiconductor, at room temperature :–

In a p-type semicondutor, there are mainly :

A conducting wire of Copper and Germanium arecooled from room temperature to temperature 80K,then their resistance will :–

Choose the false statement from the following :

Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bonds are separated by energy bandgaps represented by (Eg)C , (Eg)Si and (Eg)Ge respectively. Which one of the following relationship sis true in their case :–

Impurity energy level of n-type semiconductor lies in:

What is the energy gap in Si semiconductor?

Region which have no free electrons and holes in a p-n junction is :

In p-n junction at the near at junction there are :

Depletion layer in p-n junction region is caused by

In a P–N Junction diode not connected to any circuit

The minority current in a p-n junction is

The majority current in a p-n junction is :

Diffusion current in a p-n junction is greater than the drift current in magnitude :–

In a ............... biased P-N junction, the net flow holes is from N-region to the P-region :–

The resistance of a reverse biased on junction diode is about

In a unbias p-n junction

On increasing the reverse bias to a large value in p-n junction diode then value of current

Reverse bias applied to a junction diode :

Correct statement for diode is :

When a junction diode is reverse biased, the flow of current across the junction is mainly due to :–

The width of depletion region in a p-n junction diode

Forbidden energy gap of Ge is 0.75 eV, maximumwave length of incident radiation of photon forproducing electron - hole pair in germaniumsemiconductor is :–