In a semiconductor

Let nh and ne be the number of holes and conduction electrons in an extrinsic semiconductor. Then

A p-type semiconductor is

Electric conduction in a semiconductor takes place due to

The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of

The electrical conductivity of pure germanium can be increased by

The resistivity of a semiconductor at room temperature is in between

Number of electrons in the valence shell of a pure semiconductor is

In a semiconductor, the forbidden energy gap between the valence band and the conduction band is of the order is

The forbidden energy gap for germanium crystal at 0 K is

In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of

What is the resistivity of a pure semiconductor at absolute zero ?

Temperature coefficient of resistance of semiconductor is

In a p-type semiconductor, the acceptor valence band is

In an n-type semiconductor, donor valence band is

The mobility of free electrons is greater than that of free holes because

The relation between number of free electrons (n) in a

semiconductor and temperature (T) is given by

In semiconductors, at room temperature

At absolute zero, Si acts as

One serious drawback of semi-conductor devices is

When an impurity is doped into an intrinsic semiconductor,

the conductivity of the semiconductor

An electric field is applied to a semiconductor. Let the

number of charge carriers be n and the average drift speed

be v. If the temperature is increased

If a small amount of antimony is added to germanium crystal

By increasing the temperature, the specific resistance of a

conductor and a semiconductor

A strip of copper and another of germanium are cooled from

room temperature to 80K. The resistance of

Carbon, Silicon and Germanium atoms have four valence electrons each. Their valence and conduction bands are separated by energy band gaps represented by (Eg)C, (Eg)Si and (Eg)Ge respectively. Which one of the following relationship is true in their case?

A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be a/an

If the two ends of a p-n junction are joined by a wire

The drift current in a p-n junction is from the

The diffusion current in a p-n junction is from the

Diffusion current in a p-n junction is greater than the drift

current in magnitude

Forward biasing is that in which applied voltage

In V-I characteristic of a p-n junction, reverse biasing results in

In reverse biasing

Zener diode is used for

Filter circuit

For a junction diode the ratio of forward current (If) and

reverse current (Ir) is

[e = electronic charge,

V = voltage applied across junction,

k = Boltzmann constant,

T = temperature in kelvin]

In a semiconductor diode, the barrier potential offers

opposition to

In a P -N junction

Barrier potential of a P-N junction diode does not depend on